▎ 摘　　要

NOVELTY - The silicon carbide photovoltaic device comprises a silicon carbide substrate (10) and a passivation layer (4). The silicon carbide matrix comprises a silicon carbide light absorbing material having an intermediate band. The passivation layer is located on one side surface of the silicon carbide substrate, comprising intrinsic silicon carbide. The crystal silicon carbide is polycrystalline, microcrystalline or single crystal. The cubic structure is cubic carbon. The hexagonal structure is hexagonal six hydrogen or four hydrogen. USE - Silicon carbide photovoltaic device of silicon carbide light-gathering photovoltaic device (claimed). ADVANTAGE - The silicon carbide photovoltaic device has high photoelectric conversion efficiency, and excellent heat conducting performance, and can make a large amount of heat generated when working with high light focusing times in time, and it can effectively emit out. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a silicon carbide light-gathering photovoltaic device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the silicon carbide photovoltaic device. Front electrode (2) Back electrode (3) Passivation layer (4) Front functional layer (5) Silicon carbide substrate (10)