▎ 摘　　要

NOVELTY - A method of growing graphene on silicon substrate comprises using silicon carbide substrate chip and putting into graphite crucible, adding carbon or silicon, covering, heating at 1450-1750 degrees C in highly pure hydrogen gas, and carrying out hydrogen corrosion; and forming silicon carbide structure, introducing argon gas, increasing furnace temperature to 1500-1800 degrees C, keeping temperature for 60-90 minutes, and growing graphene. USE - Method of growing graphene on silicon substrate. ADVANTAGE - The method regulates high frequency radio frequency. DESCRIPTION OF DRAWING(S) - The drawing is a schematic diagram illustrating a method of growing graphene on silicon substrate.