• 专利标题:   Annealing method for improving photoelectric performance of graphene, involves preparing graphene sample, annealing sample in heating device in air environment, followed by quickly cooling annealed graphene.
  • 专利号:   CN105140117-A
  • 发明人:   DU C, SUN T, SHEN J, SHI H, YANG J, WEI D, SONG X
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   H01L021/324
  • 专利详细信息:   CN105140117-A 09 Dec 2015 H01L-021/324 201607 Pages: 9 English
  • 申请详细信息:   CN105140117-A CN10501109 14 Aug 2015
  • 优先权号:   CN10501109

▎ 摘  要

NOVELTY - A graphene photoelectric performance improving annealing method involves preparing graphene sample. The sample is annealed in a heating device in an air environment at 200-300 degrees C for 5-120 minutes. The annealed graphene is quickly cooled to 10-30 degrees C to obtain graphene with excellent photoelectric property. USE - Annealing method for improving photoelectric performance of graphene. ADVANTAGE - The method enables improving photoelectric performance of graphene with better stability, better electric conductivity, better light transmittance, low processing cost and wide application range.