• 专利标题:   Cyclic type graphene manufacturing device has deposition chamber and receiving chamber whose walls are arranged adjacent to each other.
  • 专利号:   KR1238449-B1
  • 发明人:   KIM K H
  • 专利权人:   SRC CORP
  • 国际专利分类:   B01J019/18, C01B031/02, C23C016/26
  • 专利详细信息:   KR1238449-B1 28 Feb 2013 C01B-031/02 201363 Pages: 20
  • 申请详细信息:   KR1238449-B1 KR073071 04 Jul 2012
  • 优先权号:   KR073071

▎ 摘  要

NOVELTY - The device (1) has heating portion (11) that is provided with uncoiler (30). A gas is supplied to pass through uncoiler to substrate which is maintained at annealing temperature in deposition chamber (20). The step type chamber, deposition chamber and coiler (40) are arranged in specific direction. The walls of deposition chamber and receiving chamber are arranged adjacent to each other. The supplied gas is nitrogen, neon, argon, krypton, xenon, carbon monoxide, carbon dioxide, nitrogen oxide, ammonia, and steam. USE - Cyclic type graphene manufacturing device. ADVANTAGE - The structure of the device is simplified. The ventilation and thermal efficiency of the device are improved. The catalytic action in the deposition chamber is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the cyclic type graphene manufacturing device. Cyclic type graphene manufacturing device (1) Heating portion (11) Deposition chamber (20) Uncoiler (30) Coiler (40)