▎ 摘　　要

NOVELTY - The cell has a metal electrode i.e. Ag electrode, whose front surface is coated with a silicon nitride film and a graphene film. An N-type silicon layer is coated on a P-type silicon substrate that is provided with a back metal electrode. The front surface of the metal electrode is contacted with the N-type silicon layer through the silicon nitride thin film and the graphene thin film, where thickness of the silicon nitride film ranges from 80 to 90nm and the graphene film ranges from 1 to 10nm. Diffusion square resistance of the N-type silicon layer ranges from 80-100 ohm. USE - Graphene silicon solar cell. ADVANTAGE - The cell reduces series resistance and increases electric current collection capacity so as to increase conversion efficiency, and has high electric conduction capacity by using strong graphene, and reduces amount of silver paste usage and the processing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene silicon solar cell manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene silicon solar cell.