• 专利标题:   Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.
  • 专利号:   CN110106549-A
  • 发明人:   LI X, SHEN C, QING F
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN110106549-A 09 Aug 2019 C30B-025/00 201978 Pages: 15 Chinese
  • 申请详细信息:   CN110106549-A CN10425005 21 May 2019
  • 优先权号:   CN10425005

▎ 摘  要

NOVELTY - Growth method of multilayer graphene single crystal film involves placing copper foil in hydrogen atmosphere, heating and annealing, maintaining constant temperature in copper foil, continuously filling mixed gas of hydrogen gas, methane and argon gas, and continuously filling mixed gas of hydrogen gas, methane and argon gas under copper foil. USE - The method is used for growing multilayer graphene single crystal film. ADVANTAGE - The method has high controllability, and controls graphene growth and number and size of graphene grown on upper side of copper foil substrate. The film has large size and high quality.