▎ 摘　　要

NOVELTY - Process of producing a pressure sensor involves cleaning a silicon wafer, depositing a layer of silicon oxide on the surface of wafer by plasma-enhanced chemical vapor deposition, depositing a chromium/gold layer by sputtering, which has a double layer of (i) a mask for microprocessing of silicon and (ii) allows for electrical contact of graphene portion, opening circular windows with a diameter of 7 mu m, using photogravure, penetrating both the metal and the oxide layer, nanostructuring of the silicon surface using a modified cryogenic corrosion process to obtain the form of silicon grass or black silicon, depositing an aluminum film on the back of the wafer to contact the cathode, and transferring monolayer graphene grown by chemical vapor deposition from above orifices, in which a black silicon was grown, where the process is carried out based on the principle of microtriode emission, and the emission current of which is stabilized by a field effect transistor. USE - The process is useful for producing a pressure sensor.