• 专利标题:   Graphene transistor e.g. top-gate-type graphene transistor has insulating film having homogeneous composition and dielectric constant that is arranged between graphene and low resistance substrate.
  • 专利号:   JP2011114299-A, JP5697069-B2
  • 发明人:   WATANABE E, TSUTANI H, KOIDE Y
  • 专利权人:   DOKURITSU GYOSEI HOJIN BUSSHITSU ZAIRYO, DOKURITSU GYOSEI HOJIN BUSSHITSU ZAIRYO
  • 国际专利分类:   H01L021/336, H01L029/06, H01L029/786
  • 专利详细信息:   JP2011114299-A 09 Jun 2011 H01L-029/786 201139 Pages: 12 Japanese
  • 申请详细信息:   JP2011114299-A JP271742 30 Nov 2009
  • 优先权号:   JP271742

▎ 摘  要

NOVELTY - The transistor has an insulating film that is arranged between a graphene and a low resistance substrate. The insulating film is provided with homogeneous composition and a dielectric constant. The basic element of insulating film is different from the basic element of the substrate. The thickness of insulating film is provided interference contract to observe the graphene with an optical microscope. USE - Graphene transistor such as top-gate-type graphene transistor and bottom-gate-type graphene transistor. ADVANTAGE - The reproducibility of insulating film can be improved, since insulating film is provided with homogeneous composition and dielectric constant. Hence, thickness of insulating film can be controlled. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene transistor. (Drawing includes non-English language text)