▎ 摘　　要

NOVELTY - Manufacture of a nonvolatile memory cell comprises forming a steering component i.e. diode (110) or transistor; and forming a graphene storage component by providing a graphene colloid, and coating the graphene colloid over a substrate to form a graphene layer (118). USE - Method of manufacturing a nonvolatile memory cell i.e. read/write memory cell or rewritable memory cell located in a monolithic three dimensional array of memory cells (claimed). ADVANTAGE - By depositing carbon resistivity switching materials, such as graphene, at low temperature including room temperature processes, nonvolatile memory cells comprising a carbon resistivity switching material components (such as graphene storage components) can be produced without sacrificing the performance of the steering component of the memory cell and the underlying complementary metal oxide semiconductor transistors of the driver circuit located on the substrate. DESCRIPTION OF DRAWING(S) - The drawing is a perspective view of a memory cell. Bottom conductor (101) Diode (110) Intrinsic region (114) Top heavily doped p-type region (116) Graphene layer (118)