• 专利标题:   Modified graphene oxide used as a special functional plastic in advanced semiconductor packaging, is a graphene oxide modified by a curing accelerator, where organic solution is prepared by dissolving graphite oxide in an organic solvent.
  • 专利号:   CN110818951-A
  • 发明人:   LI J, WANG T, ZHANG G, SUN R
  • 专利权人:   SHENZHEN INST ADVANCED TECHNOLOGY
  • 国际专利分类:   C01B032/198, C08G073/10, C08J005/18, C08K003/04, C08K009/04, C08L079/08, H01L021/56
  • 专利详细信息:   CN110818951-A 21 Feb 2020 C08K-009/04 202031 Pages: 14 Chinese
  • 申请详细信息:   CN110818951-A CN11283229 13 Dec 2019
  • 优先权号:   CN11283229

▎ 摘  要

NOVELTY - Modified graphene oxide is a graphene oxide modified by a curing accelerator. USE - Modified graphene oxide used as a special functional plastic in advanced semiconductor packaging. ADVANTAGE - The modified graphene oxide avoids warping of ultra-thin wafers and reconstructed wafers, and can effectively avoids damage to heat-resistant components. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a composite film, which is formed by curing the slurry and thickness of the composite film is 5-100 mu m; and (2) a method for preparing composite film, which involves coating the slurry on a substrate, curing, and then peeling to obtain the composite film, curing is performed in a nitrogen drying box, preferably, the curing includes maintaining at 55-65 degrees CC for 1-1.5h In the second step, keeping 1.5-2h at 95-105 degrees C, in the third step, keep 1.5-2h at 125-135 degrees C, in the fourth step, keeping 1.5-2h at 155-165 degrees C, in the fifth step is maintained at 195-205 degrees C for 2-3 hours; preferably, the peeling is to soak the cured product obtained in the deionized water to soak and sonicate the film to fall off.