• 专利标题:   Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.
  • 专利号:   KR2442676-B1
  • 发明人:   LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M
  • 专利权人:   GRAPHENELAB CO LTD
  • 国际专利分类:   C01B032/184, C01B032/194, G03F001/62
  • 专利详细信息:   KR2442676-B1 14 Sep 2022 C01B-032/194 202279 Pages: 10
  • 申请详细信息:   KR2442676-B1 KR046796 15 Apr 2022
  • 优先权号:   KR046796

▎ 摘  要

NOVELTY - Manufacturing graphene thin film for pellicle material using ozone gas comprises forming graphene on the upper surface of the substrate, exposing the graphene layer formed through the graphene forming step to ozone, and heat-treating and etching the ozonated graphene layer through the ozone treatment step. In the ozone treatment step, the graphene layer formed through the graphene forming step is exposed to ozone for 10-600 seconds at a temperature of 100-400° C in oxygen mixed gas atmosphere. USE - The graphene thin film for pellicle material is useful in semiconductor devices and electronic devices. ADVANTAGE - The graphene thin film has excellent extreme ultraviolet (EUV) transmittance and uniformity. The method prevents damage to graphene layer; maintains mechanical strength; exhibits excellent extreme ultraviolet transmittance and uniformity.