▎ 摘　　要

NOVELTY - A diamond graphene composite film is prepared by (A) placing diamond-graphene composite film required to prepare on copper matrix with good heat conductivity; (B) inducing active carbon atom and active carbon atom radical to form a core on surface of the matrix; and (C) preparing the diamond-graphene composite film. The step (C) comprises transforming graphene surface carbon bond crystal lattice type via controlling concentration of carbon source, active hydrogen atom, and matrix temperature; and growing diamond film, and preparing diamond-graphene composite film. USE - Method is used for preparation of diamond graphene composite film (claimed). ADVANTAGE - The method is simple and reliable, has high efficiency, and is pollution-free. It is suitable for industrial production. DETAILED DESCRIPTION - Diamond graphene composite film is prepared by (A) placing diamond-graphene composite film required to prepare on copper matrix with good heat conductivity; (B) inducing active carbon atom and active carbon atom radical to form a core on surface of the matrix; and (C) preparing the diamond-graphene composite film. The step (A) comprises using hard nanoparticle such as diamond powder, silicon carbide, and titanium nitride to impact and etch matrix including nickel, silicon and molybdenum under high speed; obtaining matrix surface small nano pit with high surface energy and high density; injecting high concentration active hydrogen atom to perform further reaction and etching on matrix surface small nano pit including nickel, silicon and molybdenum; making matrix form with small pit with specific structure; and placing diamond-graphene composite film required to prepare on a copper matrix with good heat conductivity. The step (B) comprises calculating concentration of matrix surface growth grapheme for carbon source gas via analyzing small nano pit and surface energy of the surface of matrix; preparing a rational cooling system, properly and uniformly obtaining matrix temperature; and inducing active carbon atom and active carbon atom radical to form core on surface of the matrix. The step (C) comprises using direct current plasma jet chemical vapor deposition (DCPJCVD) technology, and growing graphene on curved nickel matrix via nano grain and reaction etching technology; controlling thickness of graphene; transforming grapheme surface carbon bond crystal lattice type via controlling concentration of the carbon source, concentration of active hydrogen atom, and matrix temperature; and growing diamond film, and preparing diamond-graphene composite film. DESCRIPTION OF DRAWING(S) - The drawing is schematic diagram illustrating a diamond graphene composite film.