• 专利标题:   Thin film transistor for array substrate, has main body provided with source-drain electrodes, and gate insulating layer made of fluorine-doped graphene material, and source-drain electrodes whose surface is formed with active layer.
  • 专利号:   CN106847930-A
  • 发明人:   XUE D
  • 专利权人:   BOE TECHNOLOGY GROUP CO LTD
  • 国际专利分类:   H01L021/336, H01L021/77, H01L027/12, H01L029/423, H01L029/786
  • 专利详细信息:   CN106847930-A 13 Jun 2017 H01L-029/786 201754 Pages: 9 Chinese
  • 申请详细信息:   CN106847930-A CN10214502 01 Apr 2017
  • 优先权号:   CN10214502

▎ 摘  要

NOVELTY - The transistor has a main body provided with a gate and source-drain electrodes. The main body is arranged with a gate insulating layer and an active layer. The gate insulating layer is made of a fluorine-doped graphene material. A surface of the source-drain electrodes is formed with the active layer. USE - Thin film transistor for array substrate (claimed). ADVANTAGE - The transistor improves the performance and stability of the thin-film-transistor (TFT). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an array substrate preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film transistor.