▎ 摘　　要

NOVELTY - Polishing solution comprises 20-40 pts. wt. silica sol, 25-40 pts. wt. dichloroisocyanurate, 15-25 pts. wt. polyethyleneimine, 10-25 pts. wt. nano cerium dioxide and 8-18 pts. wt. gas phase silicon dioxide. USE - The polishing solution is useful for processing gallium arsenide wafer useful in fields of national defense, aerospace, energy conservation and environmental protection. ADVANTAGE - The polishing solution: has better stability and longer shelf life; ensures polishing effect; and is simple and convenient to prepare. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the polishing solution comprising mixing the silica sol with gas phase silicon dioxide, adding nano cerium dioxide, stirring, adding dichloroisocyanurate and remaining raw materials, and adding water to prepare a polishing solution.