▎ 摘　　要

NOVELTY - A substrate (100) comprises nitride semiconductor layer (12) which is provided on upper surface of silicon substrate (10) which makes surface upper surface, silicon carbide layer (14) which is provided on upper surface of nitride semiconductor layer, and graphene layer (16) which is provided on upper surface of silicon carbide layer. USE - A substrate for electronic apparatus (claimed) e.g. electronic device, optical device, and sensor device. ADVANTAGE - Graphene layer has favorable film quality. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) manufacture of substrate (100) which involves forming nitride semiconductor layer (12) on upper surface of silicon substrate (10) which makes surface upper surface, forming silicon carbide layer (14) on upper surface of nitride semiconductor layer, and forming graphene layer (16) on upper surface of silicon carbide layer; and (2) electronic apparatus comprising substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the substrate. Silicon substrate (10) Nitride semiconductor layer (12) Silicon carbide layer (14) Graphene layer (16) Substrate (100)