▎ 摘　　要

NOVELTY - A cross-type graphene hetero-junction structure is formed by attaching primary graphene on a primary silicon substrate, coating electronic beam resist and polymethyl methacrylate to graphene, baking on a hot plate, immersing substrate in potassium hydroxide aqueous solution to separate polymethyl methacrylate layer from substrate, aligning separated cross-junction shape layer on secondary graphene formed on secondary silicon substrate, and eliminating polymethyl methacrylate layer by acetone. USE - Cross-type graphene hetero-junction structure. ADVANTAGE - The cross-type graphene hetero-junction structure artificially eliminates the electric characteristic of graphene device by vertically joining single layered graphene, measuring the interlayer resistance of double-layered graphene, and inserting atomic layer between graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of cross-type graphene hetero-junction structure.