• 专利标题:   Manufacture of graphene layer laminated-diamond substrate used for semiconductor devices, involves contacting diamond substrate with metal material made of nickel, iron, cobalt, copper and chromium, heating and cooling diamond substrate.
  • 专利号:   JP2016216288-A, JP6544624-B2
  • 发明人:   TSUBOTA T, NAKAO M
  • 专利权人:   UNIV KYUSHU
  • 国际专利分类:   C01B031/02, C01B031/06, C01B032/184
  • 专利详细信息:   JP2016216288-A 22 Dec 2016 C01B-031/02 201705 Pages: 6 Japanese
  • 申请详细信息:   JP2016216288-A JP101455 19 May 2015
  • 优先权号:   JP101455

▎ 摘  要

NOVELTY - Manufacture of graphene layer laminated-diamond substrate involves contacting diamond substrate with a metal material made of one or more metals chosen from nickel, iron, cobalt, copper and chromium, heating the diamond substrate at 600-1300 degrees C in hydrogen gas or inert gas atmosphere, and cooling the diamond substrate. USE - Manufacture of graphene layer laminated-diamond substrate used for manufacture of semiconductor devices. ADVANTAGE - The method is economical and provides high quality product with increased productivity.