▎ 摘　　要

NOVELTY - The photodetector has a single crystal silicon substrate whose upper surface is etched into a silicon microhole array structure. A layer of graphene film (3) is transferred on the lower surface of a single crystal silicon substrate (2). A silicon-graphene Schottky junction is formed. A quantum dot layer (4) is provided on the lower surface of a graphene film. A top electrode (1) is provided on the upper surface of the single crystal silicon substrate. A bottom electrode (5) is provided on the lower surface of the graphene film. The top electrode is formed an ohmic contact with the single crystal silicon substrate. The bottom electrode is formed an ohmic contact with the graphene film. USE - Self-filtering visible-blind silicon compatible infrared photodetector. ADVANTAGE - The photodetector is provided with the self-driving, visible light blindness, near-infrared narrowband response, fast response speed and is provided with the strong compatibility, high stability, easy preparation, and low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photodetector. Top electrode (1) Single crystal silicon substrate (2) Layer of graphene film (3) Quantum dot layer (4) Bottom electrode (5)