▎ 摘　　要

NOVELTY - The chip has a silicon dioxide medium layer (4) formed with a square hole. A graphene layer (6) is arranged on the silicon dioxide medium layer. The graphene layer is arranged between a source metal electrode (5) and a drain electrode metal electrode (7). A gate metal electrode (8) is arranged on an indium phosphide contact layer (2), where thickness of the silicon dioxide dielectric layer is 90-300 nm. The silicon dioxide medium layer is arranged on an indium phosphide substrate (1). USE - High gain UV near infrared indium gallium arsenide detector chip. ADVANTAGE - The chip has better semi-metal characteristics, and utilizes a Schottky photodiode, which can be formed in contact with the indium gallium arsenide layer to achieve light detection, so that optical transmittance can be enhanced, and ensures mobility and carrier transport characteristics and quantum gain characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a high gain UV near infrared indium gallium arsenide detector chip. Indium phosphide substrate (1) Indium phosphide contact layer (2) Silicon dioxide medium layer (4) Source metal electrode (5) Graphene layer (6) Drain electrode metal electrode (7) Gate metal electrode (8)