▎ 摘　　要

NOVELTY - Manufacturing in situ graphene containing silicon carbide matrix ceramic composites, involves: mixing a ceramic powder composition comprising silica carbide and at least one sintering additive; and densifying the ceramic powder composition, resulting in graphene growth within a ceramic material from the ceramic powder composition. USE - For manufacturing in situ graphene containing silicon carbide matrix ceramic composites (claimed). ADVANTAGE - The graphene network has an electrical conductivity value of greater than zero and as high as 935 S.m-1; and a fracture toughness greater than zero and as high as 4.5 MPa.m\2. The present method includes in situ homogenous graphene growth within a ceramic matrix in a single-step from the thermal decomposition of SiC during the sintering process. This avoids the addition of graphene to the ceramic powder composition, reducing the complexity, the costs (since graphene is not a precursor and its production cost is eliminated from the equation), and the time of the fabrication process. This may also prevents the problems associated with the dispersion of the graphene within the matrix; and improves the thermal and electrical properties of the composition. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene-like conducting network comprising graphene flakes and silicon carbide grains, where the graphene flakes are epitaxially bonded to carbon terminated faces and silicon terminated faces of the silicon carbide grains. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of Forming in situ graphene based silicon carbide matrix ceramic composites.