▎ 摘　　要

NOVELTY - This utility new type belongs to the new material processing technology field, claims a one time by a high temperature annealing preparation graphene up silicon carbide substrate use of graphite bucket, wherein the graphite bucket as a silicon carbide substrate of container, match a heating mode of preparation, the graphite bucket comprise upper end opening of bucket body, bucket body bottom upper surface with a groove, the upper graphite. bucket upper part side wall up. with a location block, the location block is provided with hot reflecting screen, using graphite bucket of the structure can be a silicon carbide substrate is placed in the groove in the function of fixing substrate using an external hot source a heating, hot reflecting screen can ensure the heat is not dissipated, the temperature of inner graphite container, and hot reflecting screen obtain temperature field of more uniformity, preparation of graphene, the graphite bucket structure with the corresponding heating device of match, it can use high temperature annealing preparation graphene up silicon carbide substrate, improves the purity of graphite, saves the production cost and improves the production efficiency.