• 专利标题:   Preparation of graphene for e.g. FET, involves using asphalt or rock asphalt as raw material, and phthalocyanines, indoles and their derivatives as starting seed crystal, heating under inert gas protection atmosphere, and cooling.
  • 专利号:   CN104986757-A, CN104986757-B
  • 发明人:   LI L, XUE W, ZHAO R
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN104986757-A 21 Oct 2015 C01B-031/04 201626 Pages: 8 Chinese
  • 申请详细信息:   CN104986757-A CN10346493 19 Jun 2015
  • 优先权号:   CN10346493

▎ 摘  要

NOVELTY - The preparation method of graphene involves using asphalt or rock asphalt as raw material, and phthalocyanines, indoles and their derivatives as starting seed crystal, followed by heating at specified temperature range under inert gas protection atmosphere, heat-preserving, and naturally cooling to room temperature. USE - Preparation of graphene used for FET and integrated circuits, transparent conductive electrode, conductive ink, field emission source and vacuum electronic devices, supercapacitor and biological device. ADVANTAGE - The method enables safe and economical preparation of graphene without using catalyst. DETAILED DESCRIPTION - The preparation method of graphene involves using asphalt or rock asphalt as raw material, and phthalocyanines, indoles and their derivatives as starting seed crystal, heating at temperature of 200-300 degrees C at heating rate of 3-8 degrees C.minute-1 under inert gas protection atmosphere, heat-preserving for 1-2 hours, heating at temperature of 350-380 degrees C at heating rate of 3-8 degrees C.minute-1, heat-preserving for 1-2 hours, heating at temperature of 400-450 degrees C at heating rate of 3-8 degrees C.minute-1, heat-preserving for 1-2 hours, heating at temperature of 500-600 degrees C at heating rate of 3-8 degrees C.minute-1, heat-preserving for 3-5 hours, heating at temperature of 800-1000 degrees C at heating rate of 3-8 degrees C.minute-1, heat-preserving for 5-10 hours, and naturally cooling to room temperature.