• 专利标题:   High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.
  • 专利号:   CN106702483-A, CN206858694-U
  • 发明人:   DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y
  • 专利权人:   CHONGQING GRAPHENE TECH CO LTD, CHONGQING GRAPHENE TECH CO LTD
  • 国际专利分类:   C23C016/26, C23C016/54, C30B025/02, C30B029/02
  • 专利详细信息:   CN106702483-A 24 May 2017 C30B-025/02 201740 Pages: 10 Chinese
  • 申请详细信息:   CN106702483-A CN10186750 27 Mar 2017
  • 优先权号:   CN10186750, CN20309710

▎ 摘  要

NOVELTY - The arrangement has a second high temperature process chamber (3) and the transition chamber (5) arranged at positions corresponding to first high temperature process chamber. A transition roller (52) is provided on graphene growth substrate (6), such that graphene growth substrate discharge roller (11) is passed through discharge cooling zone guide roll (12), first high temperature process chamber (2), transition roller. The second high temperature process chamber and receiving cooling chamber guide roll (42) are received on graphene substrate receiving roll (41). USE - High temperature process chamber vertical arrangement of graphene continuous growth apparatus. ADVANTAGE - The impact of gravity on product quality can be reduced. The ultimate quality of graphene film is improved and the production efficiency is improved. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the high temperature process chamber vertical arrangement of graphene continuous growth apparatus. (Drawing includes non-English language text) High temperature process chamber (3) Transition chamber (5) Growth substrate (6) Discharge roller (11) Guide roll (12) Receiving roll (41) Guide roll (42) Transition roller (52)