• 专利标题:   Releasing method for releasing graphene from its growth substrate involves releasing graphene from metal substrate in presence of infiltrated liquid medium while maintaining electrical potential until graphene is released.
  • 专利号:   US9169575-B1
  • 发明人:   BEDWORTH P V, SWETT J L
  • 专利权人:   LOCKHEED MARTIN CORP
  • 国际专利分类:   C23F001/00, C25D001/14, H01L021/30, H01L021/308, H01L021/311
  • 专利详细信息:   US9169575-B1 27 Oct 2015 H01L-021/30 201578 Pages: 11 English
  • 申请详细信息:   US9169575-B1 US195802 03 Mar 2014
  • 优先权号:   US772487P, US195802

▎ 摘  要

NOVELTY - The method involves establishing electrical potential between a metal substrate (10) and an electrode disposed about 10 millimeters or less from a portion of a dielectric layer. The electrical potential induces infiltration of the liquid medium between a portion of the metal substrate and the graphene (12). The establishment of the electrical potential does not form hydrogen gas from the liquid medium. The graphene is released from the metal substrate in the presence of the infiltrated liquid medium. The electrical potential is maintained until the graphene is released. USE - Releasing method for releasing graphene from its growth substrate. ADVANTAGE - Reduces operating costs by using electrowetting processes which utilize lower energy input than electrolytic processes. Enables the contact of the conductor with the dielectric layer to take place if the mechanical strength of the dielectric layer is sufficient to permit contact to take place without inducing damage to the dielectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the substrate-bound graphene coated with a polymer layer. Metal substrate (10) Graphene (12) Polymer layer (14) Conductor (16) Electrical connection (18)