▎ 摘　　要

NOVELTY - The method involves evaporating a grid electrode on a graphene surface of a graphene/copper foil substrate to obtain a first sample. An insulating layer is sputtered and deposited on first sample to obtain a second sample. A first mask plate is covered on the second sample. A second mask plate is covered on a third sample. The fourth sample is annealed at 150-500 degrees centigrade for 10-60 min to obtain a fifth sample. Protein solution and coating are prepared on a surface of the fifth sample. The solvent in the protein solution is naturally volatilized to obtain sixth sample. A copper foil substrate is removed on the sixth sample to obtain a p-type thin film transistor. USE - Method for preparing a thin film transistor on a corn protein substrate. ADVANTAGE - The method overcomes the limitation of the substrate material heat resistance to the device preparation temperature, at the same time, it avoids the damage of the solution environment to the protein substrate in the preparation process of the device, and improves the device performance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a thin film transistor on a corn protein substrate. 130Gate electrode 140Depositing insulating layer 150Active layer 160Source/drain electrode 170Forming protein film