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  • 专利标题:   Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.
  • 专利号:   US2012138903-A1, KR2012059853-A
  • 发明人:   CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B82Y040/00, B82Y099/00, H01L021/20, H01L029/12, B32B011/00, B32B027/06, B32B009/00, H01B001/04
  • 专利详细信息:   US2012138903-A1 07 Jun 2012 H01L-029/12 201244 Pages: 7 English
  • 申请详细信息:   US2012138903-A1 US308749 01 Dec 2011
  • 优先权号:   KR121331

▎ 摘　　要

NOVELTY - A graphene substrate (100) comprises a substrate (110), metal oxide film (130) on the substrate, and graphene layer (140) on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer. USE - A graphene substrate. ADVANTAGE - The graphene substrate has no defect during transfer process of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a fabrication of graphene substrate (100). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the structure of graphene substrate. Graphene substrate (100) Substrate (110) Buffer layer (120) Metal oxide film (130) Graphene layer (140)