▎ 摘　　要

NOVELTY - Growing patterned, single-crystalline graphene comprises: depositing a graphene growth barrier that defines a pattern on a substrate surface; and growing graphene on the substrate surface, around the graphene growth barrier. USE - The method is useful for growing patterned single-crystalline graphene that comprises: a single sheet of graphene or multiple sheets of graphene in a vertical stack; and at least 10 (preferably at least 1000) sheets of graphene (all claimed). ADVANTAGE - The method provides single-crystalline graphene: with edge roughness that is lower than the edge roughness of graphene patterned using top-down etching techniques; is more robust than graphene made with top-down etching techniques, where edge roughness and defects have the potential to initiate crack propagation and failure; and which can be grown over large areas (e.g. greater than or equal to 1 cm2).