▎ 摘　　要

NOVELTY - The method involves drawing a graphene oxide film on an acetaldehyde oxime base film by suction filtration. The acetaldehyde oxime base film is placed with a surface of the graphene oxide film facing up on a water surface. The acetaldehyde oxime base film is pressed to make the acetaldehyde oxime base film sink. The graphene oxide film is floated on the water surface. The graphene oxide film floating on the water surface is fitted from a bottom up by using a silicon wafer, so that the graphene oxide film is flat spreading on a surface of a substrate. The graphene oxide film is reduced at 2000 to 3000 degree celsius, so that electrical conductivity is greater than 0.5 MS/m. USE - Silicon-based solar battery manufacturing method. ADVANTAGE - The method enables controlling thickness of the graphene oxide film at a nanometre grade to improve transmittance of the film in transfer process by introducing microscopic folds, and contact area of the film and a photosensitive layer after high temperature treatment, so that graphene defect at high film strength can bear stress change of a flexible electrode repeatedly in folding process. The method enables realizing silicon-based solar battery manufacturing process in a simple, green and easy manner to ensure graphene oxide film high electron mobility and relatively low light transmittance by continuously reflecting solar absorptivity of silicon, electrons generated by a hole and separated under action of built-in electric field, thus improving light conversion efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a silicon-based solar battery.