• 专利标题:   Preparing graphene on diamond surface, comprises e.g. placing substrate on substrate support in cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer, growing boron doped diamond film and annealing.
  • 专利号:   CN102102220-A, CN102102220-B
  • 发明人:   LI J, GU C, LU C
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C30B025/02, C30B025/08, C30B025/10, C30B025/14, C30B025/18
  • 专利详细信息:   CN102102220-A 22 Jun 2011 C30B-025/02 201153 Pages: 10 Chinese
  • 申请详细信息:   CN102102220-A CN10242957 22 Dec 2009
  • 优先权号:   CN10242957

▎ 摘  要

NOVELTY - Preparing graphene on diamond (111) surface, comprises: (i) placing the substrate on the substrate support in the cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer; (ii) growing boron doped diamond film on the diamond intermediate layer; and (iii) annealing and self organizing to form graphene. USE - The method is useful for preparing graphene on diamond (111) surface. ADVANTAGE - The grown graphene area has a higher controllability and can reach to over millimeter scale, additionally, the graphene formed on boron-doped diamond substrate is easier to produce energy gap due to a plurality of advantages of diamond and the asymmetry of boron-doped diamond substrate, therefore more conducive for applying graphene in devices. The sample prepared has a larger size which is from nanometer scale to mu m scale even to millimeter scale. The method is simple.