▎ 摘　　要

NOVELTY - The method involves arranging a workpiece and a source material inside a vacuum chamber. Energy is applied to the source material to cause atoms of the source material to be ejected from a surface of the source material into plasma. The workpiece is orientated with respect to the source material to prevent direct propagation of the ejected atoms from the source material to a work surface of the workpiece and to permit deposition of the layer onto the workpiece by ejected atoms which impact the work surface after colliding with particles of the plasma. USE - Method for depositing layer onto workpiece such as graphene using plasma, used in semiconductor industry for applying coatings or films. ADVANTAGE - The workpiece such as graphene is orientated so that a plane of the graphene workpiece is parallel with a plane of the source material and the graphene work surface faces away from the source material. Hence, ejected atoms which reach the work surface are forced to follow a path which requires traveling a longer distance compared to a straight-line path so that the energy of the ejected atom can be reduced. Also, forced ejected atoms undergo collisions with plasma particles and/or other ejected atoms so that the energy of the ejected atom can be reduced. Thus the energy of the ejected atom at the point of impact with the work surface is greatly reduced enough to avoid damage to the work surface. Since more plasma ions are present and bombarding the source material a larger number of ejected atoms is produced, this factor can improve the deposition rate. A better quality of graphene is obtained after the oxide deposition by utilizing in high argon pressure which enables the use of various oxide materials in graphene devices by sputtering. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an apparatus for depositing a layer onto a workpiece using plasma. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for depositing layer onto workpiece using plasma.