• 专利标题:   Electric current device for pumping electron from graphene, comprises graphene layer that is formed on insulation layer, where electron is pumped to graphene layer using microwave applied to gate electrodes formed on insulation layer.
  • 专利号:   KR1414131-B1
  • 发明人:   BAE M H, KIM N
  • 专利权人:   KOREA RES INST STANDARDS SCI
  • 国际专利分类:   H01L027/02
  • 专利详细信息:   KR1414131-B1 01 Jul 2014 H01L-027/02 201448 Pages: 9
  • 申请详细信息:   KR1414131-B1 KR006508 21 Jan 2013
  • 优先权号:   KR006508

▎ 摘  要

NOVELTY - The electric current device (100) comprises a graphene layer (30) formed on a primary insulation layer (20). Multiple gate electrodes (60) are formed on a secondary insulation layer (40) formed on the graphene layer. The primary insulation layer is formed on a substrate (10). The electron is pumped to one side of the graphene layer using the microwave applied to multiple gate electrodes. The insulation layers has a hexagonal-boron nitride layer. The substrate is made of silicon oxide. A source electrode (52) is formed on side of the graphene layer, on which a drain electrode (51) is formed. USE - Electric current device for pumping the electron from the graphene. ADVANTAGE - The electron is pumped to one side of the graphene layer using the microwave applied to multiple gate electrodes, and thus ensures the efficiency in controlling the minute current to the correct level, and enhances the operational efficiency of the electric current device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for pumping the electron from the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an electric current device. Substrate (10) Primary insulation layer (20) Graphene layer (30) Secondary insulation layer (40) Drain electrode (51) Source electrode (52) Gate electrodes (60) Electric current device (100)