▎ 摘　　要

NOVELTY - The method involves preparing (S2) an insulating material layer on an upper surface of a silicon wafer containing an oxide layer through an atomic layer deposition system. A single-layer graphene not covered by a soft mask pattern is etched (S4), and residual glue is removed to obtain a single-layer graphene nanoribbon. A voltage is applied (S5) to two ends of the single-layer graphene nanoribbon, multiple breakdowns are performed on opposite tip positions of the single-layer graphene nanoribbon, and a nanoscale gap is gradually constructed at the opposite tip position. A boosting step size of next boosting is adjusted according to voltage change and current change feedback of single-layer graphene nanoribbon, a detection gear of a current source table is adjusted, and the voltage is stopped to apply to two ends of the single-layer graphene nanoribbon when resistance of the single-layer graphene nanoribbon reaches a preset resistance to construct and obtain graphene sub-nanoscale gap. USE - Method for preparing graphene sub-nanoscale gap by feedback control electric breakdown in semiconductor industry. ADVANTAGE - The method enables preparing the graphene sub-nano-gap by feedback control electric breakdown, which can effectively solve problem of local heating caused by joule heat at high current density promoting graphene to be damaged in sublimation form, so as to introduce breakdown concept when edge of graphene nanobelt is broken down. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for preparing graphene sub-nanoscale gap by feedback control electric breakdown. (Drawing includes non-English language text) S1Step for preparing the gate electrode on the silicon wafer containing the oxide layer S2Step for preparing the insulating material layer on the upper surface of the silicon wafer containing the oxide layer through the atomic layer deposition system S3Step for transferring and covering the single-layer graphene on the upper surface of the target substrate through the wet process S4Step for etching the single-layer graphene not covered by a soft mask pattern S5Step for applying the voltage to two ends of the single-layer graphene nanoribbon