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  • 专利标题:   Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.
  • 专利号:   US2021395889-A1, KR2021128122-A, KR2387536-B1
  • 发明人:   VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT
  • 专利权人:   UNIV AJOU INDACADEMIC COOPERATION FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV AJOU IND ACAD COOP FOUND
  • 国际专利分类:   C23C016/06, C23C016/455, B01J027/047, B01J037/20, B01J037/34, C23C014/14, C23C014/30, C23C014/58, C23C016/30, C23C016/50, C25B001/04, C25B011/04
  • 专利详细信息:   US2021395889-A1 23 Dec 2021 C23C-016/455 202211 English
  • 申请详细信息:   US2021395889-A1 US232450 16 Apr 2021
  • 优先权号:   KR045904

▎ 摘　　要

NOVELTY - Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment. USE - Method for producing octahedral transition metal dichalcogenides, ADVANTAGE - The method enables to produce octahedral transition metal dichalcogenides that provides improved properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a electrode for hydrogen evolution reaction (HER), which comprises octahedral transition metal dichalcogenides.