▎ 摘　　要

NOVELTY - The apparatus has a graphene layer (12) arranged on a substrate (10) and provided with multiple atomic layers (48a, 48b) that are laminated together. Multiple ohmic electrodes (25) are provided on the graphene layer, where a D band strength ratio with respect to G band between the ohmic electrodes is measured using Raman spectroscopy in a first area (60) of the graphene layer such that gap between the ohmic electrodes measured using the Raman spectroscopy in a second area (62) of the graphene layer is larger than the D band strength ratio with respect to the G band in which a carrier drives. USE - Electronic apparatus i.e. FET. ADVANTAGE - The ohmic electrodes are provided on the graphene layer, where the gap between the ohmic electrodes measured using the Raman spectroscopy in the second area of the graphene layer is larger than the D band strength ratio with respect to the G band in which the carrier drives, so that contact resistance of the ohmic electrode and the graphene layer can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic apparatus. '(Drawing includes non-English language text)' Substrate (10) Graphene layer (12) Ohmic electrodes (25) Atomic layers (48a, 48b) Area's (60, 62)