• 专利标题:   Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.
  • 专利号:   CN105129785-A, CN105129785-B
  • 发明人:   DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/04, C01B032/186
  • 专利详细信息:   CN105129785-A 09 Dec 2015 C01B-031/04 201641 Pages: 10 English
  • 申请详细信息:   CN105129785-A CN10532114 26 Aug 2015
  • 优先权号:   CN10532114

▎ 摘  要

NOVELTY - The preparation method of graphene on an insulator involves placing germanium catalyst substrate in a growth chamber, introducing hydrogenous atmosphere to form a germanium-hydrogen bond on substrate, heating the catalyst substrate, introducing a carbon source and growing on the surface of the germanium catalyst substrate to obtain graphene, providing an insulation substrate, bonding one surface, formed with the graphene, of the germanium catalyst substrate with the insulation substrate to obtain a bonding pad, and performing microwave treatment. USE - The method is useful for preparing monolayer graphene on an insulator (claimed). ADVANTAGE - The method ensures the preparation of graphene on the insulator in a simple manner with large size and high quality. DETAILED DESCRIPTION - The preparation method of graphene on an insulator involves providing a germanium catalyst substrate, placing the germanium catalyst substrate in a growth chamber, introducing hydrogenous atmosphere to form a germanium-hydrogen bond on the surface of the germanium catalyst substrate, heating the catalyst substrate to a preset temperature, introducing a carbon source and growing on the surface of the germanium catalyst substrate to obtain graphene, providing an insulation substrate, bonding one surface, formed with the graphene, of the germanium catalyst substrate with the insulation substrate to obtain a bonding pad, performing microwave treatment of the bonding pad to break the germanium-hydrogen bond, generating hydrogen to peel off the graphene from the germanium catalyst substrate, and transiting hydrogen to the surface of the insulation substrate to obtain the graphene on the insulator.