▎ 摘　　要

NOVELTY - Silicon/graphene nanofilm/germanium based vertical photodetector, comprises single crystal germanium substrate, an aluminum oxide dielectric layer grown on the single crystal germanium substrate, and a silicon dioxide oxide layer grown on the aluminum oxide dielectric layer. The silicon dioxide oxide layer is provided with a germanium window penetrating to the aluminum oxide dielectric layer. The germanium window is covered with a strip-shaped graphene nano-film, and two metal electrodes grown on the silicon dioxide oxide layer are drawn from two ends of the graphene nano-film to form an ohmic contact. The graphene nano-film is covered with strip-shaped silicon on insulator top silicon, and two metal electrodes grown on the silicon dioxide oxide layer are drawn from both ends of the silicon on insulator top silicon, and form ohmic contacts. A metal back electrode is arranged on the back of the single crystal germanium substrate to form ohmic contact. USE - Used as silicon/graphene nanofilm/germanium based vertical photodetector. ADVANTAGE - The silicon/graphene nanofilm/germanium based vertical photodetector: can realize high response detection of visible light, and realize the wide spectrum detection of near-infrared and mid-infrared light; and has multi/broad spectral detection function is integrated into a single device, which greatly reduces the size of the detector and improves the energy efficiency limit of traditional silicon-based devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation of the vertical photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a three-dimensional perspective view of a vertical photodetector.