▎ 摘　　要

NOVELTY - An FET comprises a substrate layer, a graphene channel layer provided on the substrate layer, and a source electrode and a drain electrode provided on the upper surface of the graphene channel layer, with a space between, a gate dielectric layer provided on the upper surface of the graphene channel layer and between the source and drain electrodes, a semiconductor layer provided on the upper surface of the gate dielectric layer, without contacting the source and drain electrodes, and a grid electrode provided on the upper surface of the semiconductor layer. USE - FET. ADVANTAGE - The FET has improved saturation current characteristics, retains graphene mobility characteristics, and can be prepared easily on a large scale. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the FET.