• 专利标题:   Ambi-polar memory device e.g. conductivity switching memory device, has metal electrode formed on graphene oxide layer, oxide film formed in substrate, and hydrophilic molecule film formed in metal nanoparticle.
  • 专利号:   KR2011081683-A, KR1198301-B1
  • 发明人:   HONG S, MYUNG S, LEE H
  • 专利权人:   SNU R DB FOUND
  • 国际专利分类:   H01L029/70
  • 专利详细信息:   KR2011081683-A 14 Jul 2011 H01L-029/70 201161 Pages: 12
  • 申请详细信息:   KR2011081683-A KR001960 08 Jan 2010
  • 优先权号:   KR001960

▎ 摘  要

NOVELTY - The device has a metal electrode formed on a graphene oxide layer, and an oxide film formed in a substrate. A hydrophilic molecule film is formed in a metal nanoparticle that is made of one among glass, silicon dioxide, aluminum oxide, zirconium oxide, hafnium oxide, gold or palladium. The oxide film is evaporated on restored graphene oxide, and hydrphobic solution is dipped in a photoresist, where the hydrphobic solution is one among octadecytrichlorosilane, octadecyltrimethoxysilane or octadecyl, aminopropyltriexothysilane or 3-mercaptopropyl. USE - Ambi-polar memory device e.g. conductivity switching memory device and type-switching memory device (all claimed). ADVANTAGE - The device can effectively arrange the graphene in the desired location and evaporate the graphene without the damage of the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an ambi-polar memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an ambi-polar memory device.