▎ 摘　　要

NOVELTY - The interconnection has an insulating film (13) including an interconnection trench (30). A catalyst film (15) is formed on the insulating film on both side surfaces of the interconnection trench. A graphene layer (16) is formed on the catalyst film on both side surfaces of the interconnection trench. Graphene sheets are stacked in a direction perpendicular to the side surfaces of interconnection trench. USE - Graphene interconnection of large scale integration (LSI) device. ADVANTAGE - The overall characteristics of the LSI device can be improved by decreasing the graphene sheet formation temperature. The high quality graphene sheets facilitating electrical conduction can be achieved. The low-resistance interconnection can be implemented. The absolute number of graphene sheets can be increased without increasing resistance caused by the interaction between graphene sheets. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene interconnection manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene interconnection. Contact plug (12) Insulating film (13) Catalyst film (15) Graphene layer (16) Interconnection trench (30)