▎ 摘　　要

NOVELTY - The device (100) has a wiring provided above the substrate and includes a graphene nanoribbon (GNR) layer (121) which contains many of laminated graphene nanoribbon sheets. A wiring connector penetrates one of graphene nanoribbon sheets for connecting the wiring and a conductive portion above or below the wiring. USE - Semiconductor device. ADVANTAGE - The conduction properties of the wiring are improved by forming laminated pairs of catalyst layer and GNR layer. Since electric conduction does not occur directly between the laminated graphene sheets, when a via or a contact plug is connected to an upper or lower surface of a wiring, only an uppermost or lowermost graphene sheet is connected to the via or the contact plug while the graphene sheets other than the uppermost or lowermost graphene sheet cannot be used as a current path. Hence the current flow between the two vias is blocked when the two vias are connected to the upper and lower surfaces of the wiring. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of fabricating semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the vertical cross-sectional view of the semiconductor device. Insulating film (10A) Barrier metal (15) Semiconductor device (100) Catalyst layer (120) Graphene nanoribbon layer (121)