▎ 摘　　要

NOVELTY - The method involves forming graphene oxide layer by mixing methanol and water. The graphene oxide layer of 3nm in thickness is formed (S20) on bottom electrode layer on printed circuit board. Thermal annealing is performed (S30) on graphene oxide layer at 500 degrees C. A top electrode layer is formed (S40) on graphene oxide layer. The substrate is made of PET or polyethersulfone. The bottom electrode layer is made of aluminum, nickel, platinum, gold, copper ruthenium, cobalt, lead or indium-tin-oxide. USE - Manufacturing method of flexible resistance switching memory device (claimed) such as RAM. ADVANTAGE - The efficiency of the memory device is increased while production cost is reduced. DETAILED DESCRIPTION - An independent claim is included for flexible resistance switching memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for manufacturing method of flexible resistance switching memory device. (Drawing includes non-English language text) Forming bottom electrode layer (S10) Forming graphene oxide layer (S20) Performing thermal annealing process (S30) Forming top electrode layer (S40)