▎ 摘　　要

NOVELTY - The method involves cleaning inorganic and organic substances from a silicon base oxidation silicon substrate by dipping in vitriolhydrogen peroxide mixed solution (A). The vitriolhydrogen peroxide mixed solution is cooled. Graphene is coated on the silicon base oxidation silicon substrate (B). Graphene FET is carved by electron beam exposure method (C). A metal electrode is deposited with an electrode image by electronic beam evaporation method (D). Redundant metal and electron beam exposure residual colloid are removed (E). The Graphene FET is obtained for a gate electrode. USE - Graphene FET preparation method. ADVANTAGE - The method enables preventing intrinsic characteristics of graphene. DETAILED DESCRIPTION - The metal electrode is the titanium/gold metal electrode and platinum/gold metal electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene FET preparation method. '(Drawing includes non-English language text)' Step for cleaning inorganic and organic substances (A) Step for carving graphene FET (B) Step for depositing metal electrode (C) Step for removing redundant metal and electron beam exposure residual colloid (D) Step for obtaining garphene FET (E)