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  • 专利标题:   Monolithic graphene oxide comprises sub-layer, pin, flat structure bottom layer and convex portion of monolithic metal oxide grain boundaries.
  • 专利号:   KR2016048754-A, KR1702407-B1
  • 发明人:   CHU J H, KIM J H, KIM S Y, KWAK J S, KWON S Y, LEE Z, PARK K B
  • 专利权人:   UNIST ULSAN NAT SCI TECHNOLOGY INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016048754-A 04 May 2016 C01B-031/04 201635 Pages: 32 English
  • 申请详细信息:   KR2016048754-A KR051269 27 Apr 2016
  • 优先权号:   KR102603, KR051269

▎ 摘　　要

NOVELTY - Monolithic graphene oxide comprises sub-layer, pin, flat structure bottom layer and convex portion of monolithic metal oxide grain boundaries, where the graphene oxide is provided with monolithic metal oxide lower layer, convex part, hydroxyl group, epoxide group and carboxylic acid group, and weight ratio of oxygen to carbon in monolithic graphene oxide is 0.32-0.80. USE - Monolithic graphene oxide. ADVANTAGE - The monolithic graphene oxide has controllable electrical property and band gap energy.