▎ 摘　　要

NOVELTY - Directly coating graphene on copper powder surface using chemical vapor deposition (CVD) method involves plating catalyst layer using electron beam evaporation coating machine on thick P-type monocrystalline silicon upper surface with silicon dioxide layer, annealing using CVD, carbon nanotube growing, placing copper powder, absorbing copper powder at carbon nanotube surface, removing redundant copper powder through vibration, placing into vertical cold wall CVD, hydrogen and argon gas annealing, facilitating graphene growth, and passing into methane, hydrogen and argon gas. USE - Method for directly coating graphene on copper powder surface using chemical vapor deposition method. ADVANTAGE - The method prevents copper from being blown and does not sintered in large area, increases oxidation resistance, ensures conductivity and improves air anti-oxidation capacity. DETAILED DESCRIPTION - Directly coating graphene on copper powder surface using chemical vapor deposition (CVD) method involves plating catalyst layer using electron beam evaporation coating machine on 350 mu m thick P-type monocrystalline silicon upper surface with 200 nm silicon dioxide layer, annealing using CVD at 550 degrees C for 3 minutes, carbon nanotube growing for 4 minutes, placing copper powder at 665 degrees C, absorbing copper powder at carbon nanotube surface, removing redundant copper powder through vibration, placing into vertical cold wall CVD, hydrogen and argon gas annealing at 775 degrees C for 5 minutes to remove surface oxide, facilitating graphene growth, passing into methane, hydrogen and argon gas at 775 degrees C, growing for 5 minutes, cooling to 200-300 degrees C/minute, flowing hydrogen and argon gas at 150 degrees C, and starting air pump off gas.