• 专利标题:   Method for manufacturing graphene-based apparatus utilized to make e.g. solar cell, involves forming graphene layer on metal layer, remvoing metal layer from graphene layer, and forming conducting layer formed on graphene layer.
  • 专利号:   US2014147675-A1
  • 发明人:   CAO Q, HAN S
  • 专利权人:   HCGT LTD
  • 国际专利分类:   B05D005/12
  • 专利详细信息:   US2014147675-A1 29 May 2014 B05D-005/12 201440 Pages: 7 English
  • 申请详细信息:   US2014147675-A1 US685906 27 Nov 2012
  • 优先权号:   US685906

▎ 摘  要

NOVELTY - The method involves forming a graphene layer (10) on a metal layer, and forming a protective layer (14) on the graphene layer. The protective layer is transferred with the graphene layer and the metal layer onto a substrate (16). The metal layer is removed from the graphene layer. A conducting layer (18) is formed on the graphene layer. A dopant is added to the graphene layer after removing the metal layer from the graphene layer. The protective layer is made from epoxy-based polymer, and the metal layer is made of copper and nickel. USE - Method for manufacturing graphene-based apparatus utilized to make a solar cell, an LED, a battery, a super capacitor, an anti-static device, a electro-chromic device, a electro-wetting device and a touch panel (all claimed). ADVANTAGE - The method enables preventing graphene damage during transferring, utilizing a conducting layer to bridge locally discontinues graphene regions to enhance overall uniformity of conduction, and producing the graphene apparatus efficiently. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for manufacturing a graphene-based apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene-based apparatus. Graphene layer (10) Protective layer (14) Substrate (16) Conducting layer (18)