▎ 摘　　要

NOVELTY - The application claims an integrated waveguide type detector and a photonic integrated chip, relating to the single photon integrated technology field. The integrated waveguide type detector comprises a first lithium niobate thin film optical waveguide, two passivation layers, a graphene layer and a detection electrode. the material of the passivation layer is silicon dioxide, two passivation layers are set along the first direction and interval respectively connected with two opposite sides of the first lithium niobate thin film optical waveguide. graphene layer and the first lithium niobate thin film optical waveguide are stacked along the second direction, the first direction is vertical to the second direction, the graphene layer covers at least part of the surface of the two passivation layers and at least part of the surface of the first lithium niobate thin film optical waveguide. the detection electrode is connected to the surface of the graphene layer far away from the first lithium niobate thin film optical waveguide. The application combines the first lithium niobate thin film optical waveguide with the graphene layer, through the waveguide, coupling can increase the transverse light absorption length, it can realize the ultra-wideband of the light, high response and high speed detection, and realizing the single chip integration of the detector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a photonic integrated chip.