▎ 摘　　要

NOVELTY - The detector has a detector substrate (1), a graphene insertion layer (2), a first gallium nitride (GaN) layer (3), an aluminum GaN layer (4), a gallium oxide layer (5) and a transparent conductive layer (6). The electrodes are arranged on the graphene insertion layer and the transparent conductive layer. The transparent conductive layer is a graphene-silver nanowire structure (10). The detector substrate is a sapphire substrate. A first electrode (7) and a second electrode (8) are respectively provided on a surface of the graphene insertion layer and the transparent conductive layer. The detection wavelength of a photodetector is in an ultraviolet band. The different wavelengths of ultraviolet light are detected when the applied bias voltage changes. USE - UV wave band adjustable photoelectric detector of transparent conductive structure used in military science and technology and civil market communication and imaging fields. ADVANTAGE - The UV band adjustable photoelectric detector of transparent conductive structure overcomes the defect of the GaN or aluminum GaN material caused by contact constant mismatch, causes the dark current in the vicinity of the interface to become large, and has good conductivity. The ladder-shaped gallium oxide layer effectively increases the light receiving area, and the high mobility characteristic of the graphene transparent conductor increases the photocurrent. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing an UV band tunable photodetector with a transparent conductive structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a photodetection structure of UV wave band adjustable photoelectric detector. Detector substrate (1) Graphene insertion layer (2) GaN layer (3) Aluminum GaN layer (4) Gallium oxide layer (5) Transparent conductive layer (6) First electrode (7) Second electrode (8) Graphene-silver nanowire structure (10)