▎ 摘　　要

NOVELTY - The device has a nail fixed with a graphene electrode layer (2) through a reinforcing electrode (1). The reinforcing electrode is formed at an end part of first and second semiconductor layers (3, 5), where the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer. The reinforcing electrode is made of metal oxide electric conduction or electric conduction composite material, where the graphene electrode layer is a graphite film and the reinforcing electrode is a gold, silver, chromium, platinum, nickel or titanium. USE - Graphite electrode-based semiconductor device. ADVANTAGE - The device has a graphene electrode formed with a composite connecting structure so as to improve controlling efficiency and electric current distribution efficiency of the graphene electrode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphite electrode-based semiconductor device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphite electrode-based semiconductor device. Reinforcing electrode (1) Graphene electrode layer (2) First and second semiconductor layers (3, 5) Active layer (4)