• 专利标题:   Production of graphene quantum dots used in electronic device, involves thermally decomposing silicon carbide substrate in reduced pressure atmosphere in which mixed gas containing hydrogen is supplied.
  • 专利号:   KR2022110885-A
  • 发明人:   CHO S O, LEENAEUN
  • 专利权人:   KOREA ADVANCED SCI TECHNOLOGY INST
  • 国际专利分类:   B82Y020/00, B82Y040/00, C01B032/184, C09K011/65
  • 专利详细信息:   KR2022110885-A 09 Aug 2022 C09K-011/65 202269 Pages: 21
  • 申请详细信息:   KR2022110885-A KR013843 01 Feb 2021
  • 优先权号:   KR013843

▎ 摘  要

NOVELTY - Production of graphene quantum dots involves thermally decomposing silicon carbide substrate in a reduced pressure atmosphere in which a mixed gas containing hydrogen is supplied. USE - Production of graphene quantum dots e.g. hydrogen-terminated graphene quantum dot used in electronic device (all claimed). Uses include but are not limited to bio-imaging, bio-sensing, photovoltaic cells, drug delivery, and optoelectronic devices. ADVANTAGE - The method manufactures graphene quantum dots with low toxicity, high crystallinity, few defects and high purity, by an easy method of controlling an atmosphere when silicon carbide is thermally decomposed, and does not use harmful chemicals. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene quantum dots.