• 专利标题:   Method for preparation of atomic gas chamber non-magnetic transparent electric heating film based on laser direct writing, involves using laser direct writing reduction technology to manufacture line type micro pattern on graphene oxide transparent film.
  • 专利号:   CN113830756-A
  • 发明人:   TIAN Z, CHAI Z
  • 专利权人:   UNIV BEIHANG
  • 国际专利分类:   C01B032/19, H05B003/00, H05B003/14, H05B003/20
  • 专利详细信息:   CN113830756-A 24 Dec 2021 C01B-032/19 202216 Chinese
  • 申请详细信息:   CN113830756-A CN11339384 12 Nov 2021
  • 优先权号:   CN11339384

▎ 摘  要

NOVELTY - The preparation method involves preparing a graphene oxide transparent film in an atomic gas chamber. The laser direct write used to reduce the graphene oxide formed by reducing graphene oxide by a laser. The current directions of the first electrode and the second electrode in the eight-pole rectangular configuration are opposite. The current directions of the second electrode and the third electrode are the same. The current directions of the third electrode and the fourth electrode are opposite. The current directions of the fourth electrode and the fifth electrode are opposite. The current directions of the sixth electrode and the seventh electrode are the same. The current directions of the seventh electrode and the eighth electrode are opposite to each other. USE - Method for preparation of atomic gas chamber non-magnetic transparent electric heating film based on laser direct writing used in micro-electro-mechanical system (MEMS). ADVANTAGE - By using laser direct writing reduction technology on the graphene oxide transparent film with insulating performance is made with circuit type micro-pattern for non-magnetization electric heating around the atomic gas chamber, which is good for controlling the temperature and magnetic field of the gas chamber more accurately and controllably, so that the working effect of the device is more excellent. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the method.